2sb1386 / 2SB1412 / 2sb1326 transistors low frequency transistor ( ? 20v, ? 5a) 2sb1386 / 2SB1412 / 2sb1326 ! ! ! ! features 1) low v ce(sat) . v ce(sat) = ? 0.35v (typ.) (i c /i b = ? 4a / ? 0.1a) 2) excellent dc current gain characteristics. 3) complements the 2sd2098 / 2sd2118 / 2sd2097. ! ! ! ! structure epitaxial planar type pnp silicon transistor ! ! ! ! external dimensions (units : mm) (1) base (2) collector (3) emitter rohm : cpt3 eiaj : sc-63 2sb1386 2sb1326 2SB1412 (1) base (2) collector (3) emitter rohm : mpt3 eiaj : sc-62 (1) emitter (2) collector (3) base rohm : atv 1.0 6.8 0.2 2.5 0.2 1.05 0.45 0.1 2.54 2.54 0.5 0.1 0.9 4.4 0.2 14.5 0.5 (1) (2) (3) 0.65max. 0.3 ? 0.1 + 0.2 ? 0.05 + 0.1 ? 0.1 + 0.2 + 0.2 ? 0.1 (3) (2) (1) 4.0 1.0 0.2 0.5 0.1 2.5 3.0 0.2 1.5 0.1 1.5 0.1 0.4 0.1 0.5 0.1 0.4 0.1 0.4 1.5 4.5 1.6 0.1 ? 0.1 + 0.2 ? 0.1 + 0.2 + 0.3 ? 0.1 2.3 0.2 2.3 0.2 0.65 0.1 0.9 0.75 1.0 0.2 0.55 0.1 9.5 0.5 5.5 1.5 0.3 2.5 1.5 2.3 0.5 0.1 6.5 0.2 5.1 c0.5 (3) (2) (1) 0.9 ? denotes h fe abbreviated symbol: bh ?
2sb1386 / 2SB1412 / 2sb1326 transistors ! ! ! ! absolute maximum ratings (ta=25 c) collector-base voltage collector-emitter voltage emitter-base voltage collector current collector power dissipation junction temperature storage temperature ? 1 single pulse, pw=10ms ? 2 when mounted on a 40 40 0.7 mm ceramic board. ? 3 printed circuit board glass epoxy board 1.6 mm thick with copper plating 100mm 2 or larger. parameter v cbo v ceo v ebo p c tj tstg ? 30 v v v a(dc) c c ? 20 ? 6 ? 5 i c a(pulse) ? 10 ? 1 ? 3 ? 2 0.5 2w w w 1 10 w(t c = 25 c) 1w 2sb1386 2SB1412 2sb1326 150 ? 55 ~ + 150 symbol limits unit ! ! ! ! electrical characteristics (ta=25 c) collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current dc current transfer ratio collector-emitter saturation voltage output capacitance ? measured using pulse current. parameter symbol bv cbo bv ceo bv ebo i cbo i ebo h fe v ce(sat) f t cob min. ? 30 ? 20 ? 6 ? ? 82 2sb1386,2SB1412 2sb1326 ? ? ? ? ? ? ? ? ? ? ? ? ? 120 60 ? ? ? ? 0.5 ? 0.5 390 ? 1.0 ? ? v i c =? 50 a i c =? 1ma i e =? 50 a v cb =? 20v v eb =? 5v v ce =? 2v, i c =? 0.5a i c /i b =? 4a/ ? 0.1a v ce =? 6v, i e = 50ma, f = 30mhz v cb =? 20v, i e = 0a, f = 1mhz v v a a ? 120 ? 390 ? v mhz pf typ. max. unit conditions transition frequency ! ! ! ! packaging specifications and h fe package code taping basic ordering unit (pieces) t100 tl 1000 2500 ? pqr h fe 2sb1386 ? tv2 2500 ? ? pqr 2SB1412 ?? qr 2sb1326 type h fe values are classified as follows : item p q r h fe 82 ~ 180 120 ~ 270 180 ~ 390
2sb1386 / 2SB1412 / 2sb1326 transistors ! ! ! ! electrical characteristic curves fig.1 grounded emitter propagation characteristics collector current : i c (a) base to emitter voltage : v be (v) 0 -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 -1m -2m -5m -10m -20m -200m -100m -50m -500m -1 -2 -10 -5 v ce = ? 2v 25 c ? 25 c ta = 100 c fig.2 grounded emitter output characteristics collector current : i c (a) collector to emitter voltage : v ce (v) 0 -0.4 -0.8 -1.2 -1.6 -2.0 -1 -2 -3 -5 -4 0 i b = 0a ? 20ma ? 25ma ? 30ma ? 10ma ? 5ma ? 15ma ta = 25 c ? 50ma ? 45ma ? 40ma ? 35ma fig.3 dc current gain vs. collector current ( ) dc current gain : h fe collector current : i c (a) ta = 25 c ? 2v v ce =? 5v ? 1v -1m -5m-0.01 -0.05 -1 -2 -5 -10 -2m 100 200 500 1k 2k 5k 50 20 10 5 -0.02 -0.1 -0.5 -0.2 fig.4 dc current gain vs. collector current ( ? ) dc current gain : h fe collector current : i c (a) v ce =? 1v -1m -5m -0.01 -0.05 -1 -2 -5 -10 -2m 100 200 500 1k 2k 5k 50 20 10 5 -0.02 -0.1 -0.5 -0.2 25 c ? 25 c ta = 100 c fig.5 dc current gain vs. collector current ( ?? ) dc current gain : h fe collector current : i c (a) -1m -5m-0.01 -0.05 -1 -2 -5 -10 -2m 100 200 500 1k 2k 5k 50 20 10 5 -0.02 -0.1 -0.5 -0.2 25 c ? 25 c ta = 100 c v ce =? 2v fig.6 collector-emitter saturation voltage vs. collector current ( ) i c /i b = 50/1 /1 ta = 25 c 40/1 30/1 10/1 collector saturation voltage : v ce(sat) (v) collector current : i c (a) -1 -2 -5 -10 -0.01-0.02 -0.1 -0.2 -0.5 -0.05 -2m -5m -0.01 -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 -5 fig.7 collector-emitter saturation voltage vs. collector current ( ? ) ta = 100 c 25 c l c /l b = 10 ? 25 c collector saturation voltage : v ce(sat) (v) collector current : i c (a) -1 -2 -5 -10 -0.01-0.02 -0.1 -0.2 -0.5 -0.05 -2m -5m -0.01 -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 -5 fig.8 collector-emitter saturation voltage vs. collector current ( ?? ) ta = 100 c ? 25 c 25 c l c /l b = 30 collector saturation voltage : v ce(sat) (v) collector current : i c (a) -1 -2 -5 -10 -0.01-0.02 -0.1 -0.2 -0.5 -0.05 -2m -5m -0.01 -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 -5 fig.9 collector-emitter saturation voltage vs. collector current (iv) ta = 100 c ? 25 c 25 c l c /l b = 40 collector saturation voltage : v ce(sat) (v) collector current : i c (a) -1 -2 -5 -10 -0.01-0.02 -0.1 -0.2 -0.5 -0.05 -2m -5m -0.01 -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 -5
2sb1386 / 2SB1412 / 2sb1326 transistors collector saturation voltage : v ce(sat) (v) collector current : i c (a) -1 -2 -5 -10 -0.01-0.02 -0.1 -0.2 -0.5 -0.05 -2m -5m -0.01 -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 -5 ? 25 c 25 c ta = 100 c l c /l b = 50 fig.10 collector-emitter saturation voltage vs. collector current (v) fig.11 gain bandwidth product vs. emitter current emitter current : i e (ma) transeition frequency : f t (mhz) 1 2 5 10 50 100 200 500 20 20 50 100 200 500 1 000 10 5 2 1 1000 ta = 25 c v ce =? 6v fig.12 collector output capacitance vs. collector-base voltage collector output capacitance : cob ( pf) collector to base voltage : v cb (v) -0.1 -0.2 -0.5 -1 -2 -5 -10 -20 -50 1000 500 200 100 50 10 20 ta = 25 c f = 1mhz i e = 0a fig.13 emitter input capacitance vs. emitter-base voltage emitter intput capacitance : cib ( pf) emitter to base voltage : v eb (v) 10 20 50 100 200 500 1000 -0.1 -0.2 -0.5 -1 -2 -5 -10 ta = 25 c f = 1mhz i c = 0a collector to emitter voltage : ? v ce (v) collector current : i c (a) 0.2 0.5 1 2 5 10 20 50 100 500 200 50 5 20 2 10 1 200m 100m 50m 20m 10m 500m 100 fig.14 safe operation area (2SB1412) dc ta = 25 c ? single nonrepetitive pulse pw = 10ms pw = 100ms
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